ADG438F AD [Analog Devices], ADG438F Datasheet - Page 2

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ADG438F

Manufacturer Part Number
ADG438F
Description
High Performance 4/8 Channel Fault-Protected Analog Multiplexers
Manufacturer
AD [Analog Devices]
Datasheet

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ADG438F/ADG439F–SPECIFICATIONS
Dual Supply
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
FAULT
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature range is as follows: B Version: –40 C to +105 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
R
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Output Leakage Current
Input Leakage Current
Input Leakage Current
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
t
t
t
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
I
I
TRANSITION
OPEN
ON
OFF
SETT
DD
SS
R
ON
ON
ON
IN
S
D
ADG438F
ADG439F
ADG438F
ADG439F
(With Overvoltage)
(With Overvoltage)
(With Power Supplies OFF)
I
0.1%
0.01%
ADG438F
ADG439F
ON
(OFF)
(OFF)
INL
, Digital Input Capacitance
(EN)
Drift
(EN)
Match
, Settling Time
or I
INH
(V
D
INL
INH
S
DD
D
(OFF)
(OFF)
, I
= +15 V, V
S
(ON)
2
SS
= –15 V, GND = 0 V, unless otherwise noted)
+25 C
0.6
3
5
170
220
10
200
250
110
150
4
80
85
5
50
25
0.05
0.15
0.01
0.02
0.01
0.5
0.01
0.5
0.5
0.01
0.5
0.5
0.02
0.1
0.005
0.1
0.001
0.1
B Version
–40 C to
+85 C
V
V
400
5
3
2.4
0.8
300
10
300
180
0.5
1.7
0.25
0.04
2
5
5
5
5
2
1
1
1
SS
DD
+ 1.2
– 0.8
–40 C to
+105 C
V
V
400
5
3
2.4
0.8
320
10
300
180
0.5
1.7
0.25
0.04
5
30
15
30
15
10
2
4
1
SS
DD
–2–
+ 1.2
– 0.8
Units
V min
V max
% max
%/ C typ
% max
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
nA typ
V min
V max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
mA typ
mA max
mA typ
mA max
1
A max
A typ
A max
A typ
A max
A max
s typ
s typ
max
Test Conditions/Comments
–10 V < V
–5 V < V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
Test Circuit 4
V
V
V
Test Circuit 6
V
R
V
R
V
R
V
R
V
R
V
V
R
V
R
V
V
S
S
S
D
D
S
S
S
S
IN
L
S1
L
S
L
S
L
S
L
S
L
S
L
S
IN
= 0 V, R
= 0 V, I
= 10 V, I
= V
= –33 V, +33 V or +50 V, V
= 25 V, V
= 25 V, V
= +5 V; Test Circuit 8
= +5 V; Test Circuit 9
= +5 V; Test Circuit 9
= +5 V
= 7 V rms; Test Circuit 11
= 7 V rms; Test Circuit 12
= 1 M , C
= 1 k , C
= 1 k , C
= 1 k , C
= 1 k , C
= 1 k , C
= 1 k , C
= 10 V, V
= 10 V, V
= 10 V, V
= 0 or V
= 0 V or 5 V
D
= 10 V;
S
S
< +5 V, I
S
S
< +10 V, I
= 1 mA
DD
= 0 , C
L
L
L
L
L
L
S
D
D
L
S
S
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
= 15 pF, f = 100 kHz;
= 15 pF, f = 100 kHz;
= 1 mA
S8
=
=
= 35 pF;
= V
= 10 V, Test Circuit 5
=
S
10 V;
10 V;
EN
L
= 1 mA;
10 V; Test Circuit 7
= 1 nF; Test Circuit 10
S
= A0, A1, A2 = 0 V
= 1 mA;
D
= 0 V, Test Circuit 3
REV. D

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