M27C160-100B6 STMICROELECTRONICS [STMicroelectronics], M27C160-100B6 Datasheet - Page 5

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M27C160-100B6

Manufacturer Part Number
M27C160-100B6
Description
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Table 7. Read Mode DC Characteristics
(T
Note: 1. V
Standby Mode
The M27C160 has a standby mode which reduces
the active current from 50mA to 100µA. The
M27C160 is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high imped-
ance state, independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
Symbol
A
V
will not occur.
I
I
V
V
I
I
CC1
CC2
I
V
IH
= 0 to 70 °C or –40 to 85 °C; V
I
LO
CC
PP
OH
LI
OL
2. Maximum DC voltage on Output is V
IL
(2)
CC
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Parameter
CC
CC
+0.5V.
= 5V ± 5% or 5V ± 10%; V
(1)
PP
and removed simultaneously or after V
I
I
OUT
OUT
0V
E = V
E = V
Test Condition
E > V
0V
I
OH
I
= 0mA, f = 8MHz
= 0mA, f = 5MHz
OL
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current I
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E.
The magnitude of the transient current peaks is
dependent on the capacitive and inductive loading
of the device outputs. The associated transient
voltage peaks can be suppressed by complying
with the two line output control and by properly se-
lected decoupling capacitors. It is recommended
that a 0.1µF ceramic capacitor is used on every
device between V
high frequency type of low inherent inductance
and should be placed as close as possible to the
device. In addition, a 4.7µF electrolytic capacitor
should be used between V
eight devices.
This capacitor should be mounted near the power
supply connection point. The purpose of this ca-
pacitor is to overcome the voltage drop caused by
the inductive effects of PCB traces.
PP
E = V
V
= –400µA
IL
IL
= 2.1mA
V
CC
OUT
, G = V
, G = V
IN
= V
– 0.2V
IH
CC
V
V
CC
PP
CC
IL
IL
,
,
= V
CC
CC
)
and V
PP
–0.3
Min
2.4
2
.
CC
SS
. This should be a
and V
V
CC
Max
±10
100
0.8
0.4
±1
70
50
10
1
+ 1
SS
M27C160
for every
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
5/19
CC

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