MXD1210ESA MAXIM [Maxim Integrated Products], MXD1210ESA Datasheet

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MXD1210ESA

Manufacturer Part Number
MXD1210ESA
Description
Nonvolatile RAM Controller
Manufacturer
MAXIM [Maxim Integrated Products]
Datasheet
1.MXD1210ESA.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MXD1210ESA
Manufacturer:
MAXIM
Quantity:
60
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MXD1210ESA
Manufacturer:
MAXIM/美信
Quantity:
20 000
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-
tolerance) condition. When the power supply begins to
fail, the RAM is write protected, and the device switch-
es to battery-backup mode.
19-0154; Rev 1; 3/96
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
_________________Pin Configurations
_______________General Description
TOP VIEW
µP Systems
Computers
Embedded Systems
VBATT1
VBATT1
V
V
GND
GND
N.C.
N.C.
N.C.
N.C.
TOL
TOL
CCO
CCO
________________________________________________________________ Maxim Integrated Products
1
2
3
4
1
2
3
4
5
6
7
8
MXD1210
Wide SO
MXD1210
DIP/SO
Applications
16
15
14
13
12
11
10
8
7
6
5
9
V
VBATT2
CEO
CE
N.C.
V
N.C.
VBATT2
N.C.
CEO
N.C.
CE
CCI
CCI
Nonvolatile RAM Controller
____________________________Features
*Contact factory for dice specifications.
__________Typical Operating Circuit
______________Ordering Information
MXD1210CPA
MXD1210CSA
MXD1210CWE
MXD1210C/D
MXD1210EPA
MXD1210ESA
MXD1210EWE
MXD1210MJA
+5V
DECODER
Battery Backup
Memory Write Protection
230µA Operating-Mode Quiescent Current
2nA Backup-Mode Quiescent Current
Battery Freshness Seal
Optional Redundant Battery
Low Forward-Voltage Drop on V
5% or 10% Power-Fail Detection Options
Tests Battery Condition During Power-Up
8-Pin SO Available
FROM
V
PART
CCI
CE
8
5
4
MXD1210
1
7
6
3
2
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
VBATT2
VBATT1
V
CCO
CC
CE
GND
8 Plastic DIP
8 SO
16 Wide SO
Dice*
8 Plastic DIP
8 SO
16 Wide SO
8 CERDIP
Supply Switch
PIN-PACKAGE
CMOS
RAM
V
CC
1

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MXD1210ESA Summary of contents

Page 1

... Low Forward-Voltage Drop 10% Power-Fail Detection Options Tests Battery Condition During Power-Up 8-Pin SO Available ______________Ordering Information PART MXD1210CPA MXD1210CSA MXD1210CWE MXD1210C/D V CCI MXD1210EPA VBATT2 MXD1210ESA MXD1210EWE CEO MXD1210MJA CE *Contact factory for dice specifications. __________Typical Operating Circuit V CCI +5V 8 N.C. V CCI MXD1210 N ...

Page 2

Nonvolatile RAM Controller ABSOLUTE MAXIMUM RATINGS V to GND ................................................................-0.3V, +7V CCI VBATT1 to GND.......................................................... -0.3V, +7V VBATT2 to GND.......................................................... -0.3V, + GND..................................................... -0.3V, V CCO (V = greater CCI Digital Input and Output Voltages ...

Page 3

ELECTRICAL CHARACTERISTICS (V < VBATT; positive edge rate at VBATT1, VBATT2 > 0.1V CCI PARAMETER SYMBOL BATTERY-BACKUP MODE Quiescent Current (Note 1) I Output Supply Current (Notes CEO Output Voltage ELECTRICAL CHARACTERISTICS ( ...

Page 4

Nonvolatile RAM Controller ______________________________________________________________Pin Description PIN 8-PIN DIP/SO 16-PIN WIDE – 10, 12, 14 CCI VBATT1 P ...

Page 5

Detailed Description Main Functions The MXD1210 executes five main functions to perform reliable RAM operation and battery backup (see Typical Operating Circuit and Figure 1): 1. RAM Power-Supply Switch: The switch directs power to the RAM from the incoming ...

Page 6

Nonvolatile RAM Controller -O.2V BATT V IH CEO REC 4.75V 4.5V 4.25V CCI Figure 2. Power-Up Timing Diagram 6 _______________________________________________________________________________________ ...

Page 7

Topography V VBATT2 CCI V CCO VBATT1 TOL GND 0.080" (2.032mm) TRANSISTOR COUNT: 1436; LEAVE SUBSTRATE UNCONNECTED. _______________________________________________________________________________________ Nonvolatile RAM Controller 0.121" (3.073mm) CEO CE 7 ...

Page 8

Nonvolatile RAM Controller ________________________________________________________Package Information 0.127mm 0.004in Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a ...

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