S-8211DAI-M5T1G SII [Seiko Instruments Inc], S-8211DAI-M5T1G Datasheet - Page 12

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S-8211DAI-M5T1G

Manufacturer Part Number
S-8211DAI-M5T1G
Description
BATTERY PROTECTION IC FOR 1-CELL PACK
Manufacturer
SII [Seiko Instruments Inc]
Datasheet
12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
(7) Power-down Current Consumption, Overdischarge Current Consumption
(8) Resistance between VM Pin and VDD Pin
(9) Resistance between VM Pin and VSS Pin
(10) CO Pin Resistance “H”
(11) CO Pin Resistance “L”
(12) DO Pin Resistance “H”
(13) DO Pin Resistance “L”
(14) Overcharge Detection Delay Time
(15) Overdischarge Detection Delay Time
The CO pin resistance “H” (R
0 V, V3 = 3.0 V.
The CO pin resistance “L” (R
0 V, V3 = 0.5 V.
(Test Condition 4, Test Circuit 2)
Shutdown function yes product
The power-down current consumption (I
conditions of V1 = V2 = 1.5 V (overdischarge status).
Shutdown function no product
The overdischarge current consumption (I
conditions of V1 = V2 = 1.5 V (overdischarge status).
(Test Condition 5, Test Circuit 3)
The resistance between VM pin and VDD pin (R
conditions of V1 = 1.8 V, V2 = 0 V.
(Test Condition 5, Test Circuit 3)
The resistance between VM pin and VSS pin (R
conditions of V1 = 3.5 V, V2 = 1.0 V.
(Test Condition 6, Test Circuit 4)
(Test Condition 6, Test Circuit 4)
(Test Condition 7, Test Circuit 4)
The DO pin H resistance (R
0 V, V4 = 3.0 V.
(Test Condition 7, Test Circuit 4)
The DO pin L resistance (R
0 V, V4 = 0.5 V.
(Test Condition 8, Test Circuit 5)
The overcharge detection delay time (t
V1 momentarily increases (within 10 µs) from overcharge detection voltage (V
voltage (V
(Test Condition 8, Test Circuit 5)
The overdischarge detection delay time (t
V1 momentarily decreases (within 10 µs) from overcharge detection voltage (V
voltage (V
CU
DL
) −0.2 V under the set condition of V2 = 0 V.
) +0.2 V under the set conditions of V2 = 0 V.
DOL
DOH
COL
COH
) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 =
) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 =
) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 =
) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 =
CU
) is the time needed for V
DL
PDN
Seiko Instruments Inc.
OPED
) is the time needed for V
) is the current that flows through the VDD pin (I
) is the current that flows through the VDD pin (I
VMD
VMS
) is the resistance between VM pin and VDD pin under the set
) is the resistance between VM pin and VSS pin under the set
CO
DO
to change from “H” to “L” just after the voltage
to change from “H” to “L” just after the voltage
CU
DL
) −0.2 V to overcharge detection
) +0.2 V to overcharge detection
DD
DD
) under the set
) under the set
Rev.4.5
_00

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