AOZ9004DI-00 AOSMD [Alpha & Omega Semiconductors], AOZ9004DI-00 Datasheet - Page 6

• Manufacturer Part Number: AOZ9004DI-00
• Description: Single-Cell Battery Protection IC
• Manufacturer: AOSMD [Alpha & Omega Semiconductors]

Electrical Characteristics
T
production tested.
A
INPUT CURRENT (Shutdown Function)
INTEGRATED MOSFET
DETECTION DELAY TIME (Combination 2 per Table 1)
Symbol
Rev. 1.1 August 2008
BV
BV
I
I
t
LEAK_C
LEAK_D
= 25°C unless otherwise specified. Parameters specified over T
SHORT
t
t
I
I
R
DIOV
CIOV
OPE
PDN
t
t
CU
DS_C
DS_D
DL
SS
Current Consumption During
Operation
Current Consumption at
Shutdown
Charge Control MOSFET
Drain-Source Breakdown
Charge Control MOSFET
Leakage
Discharge Control MOSFET
Drain-Source Breakdown
Voltage
Discharge Control MOSFET
Leakage Current
Total Output Resistance
(OUTM to V
Overcharge Detection Delay
Time
Over-Discharge Detection Delay
Time
Discharge Over-Current
Detection Delay Time
Charge Over-Current Detection
Delay Time
Load Short-Circuiting
Detection Delay Time
Parameter
SS
)
(Continued)
V
T
V
T
V
V
V
V
V
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
A
A
A
A
DD
DD
DD
DD
DD
DD
DD
= -40°C to +85°C
= -40°C to +85°C
= 25°C
= -40°C to +85°C
= 25°C
= -40°C to +85°C
= 25°C
= -40°C to +85°C
= 25°C
= -40°C to +85°C
= 25°C
= -40°C to +85°C
= 3.5V, V
= V
= V
= V
= V
= V
= 3.5V, I
VM
CU
CU
DL
DL
www.aosmd.com
= 1.5V
Condition
OUT
VM
= 0V
= 1.5A
A
= -40°C to +85°C are guaranteed by design only and not
Min.
0.96
120
240
150
1.0
0.7
0.7
7.2
7.2
30
30
83
5
5
Typ.
150
300
150
300
3.0
3.0
1.2
1.2
48
9
9
9
9
AOZ9004D
Max.
180
255
360
540
5.5
6.0
0.2
0.3
1.4
60
15
15
11
11
1
1
2
Page 6 of 16
Unit
mΩ
µA
µA
µA
µA
µA
µA
ms
ms
ms
ms
ms
ms
µs
µs
V
V
s
s