R2J25953-00 RENESAS [Renesas Technology Corp], R2J25953-00 Datasheet

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R2J25953-00

Manufacturer Part Number
R2J25953-00
Description
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
R2J25953
H-Bridge Control High Speed Power Switching
with Built-in Driver IC and Power MOS FET
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver
in a single HSOP-36 package.
Features
 For Automotive application
 Built-in low on state resistance MOS FET.
 Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
 Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD)
 Built-in diagnostic function.
 Built-in cross-conduction protection.
 Small Surface mounting package: HSOP-36
Block Diagram
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
(Pch: 16 m Max., Nch: 11 m Max.)
and Overcurrent Detection.
VBAT
protection device
Vz
Reverce battery
Cp
OUT1
PGND1
VB1
Pch MOS
Nch MOS
PWM
Dr.
Dr.
INA
Microcomputer
VBS1
Overcurrent detection
Logic
INB
LVI, OVD
TSD
DIAG
M
VCC
LGND
VBS2
R1
Preliminary
Pull-up in the Microcomputer
power supply
V30
C1
Dr.
Dr.
Pch MOS
Nch MOS
R07DS0044EJ0300
Datasheet
VB2
PGND2
Sep 01, 2010
Page 1 of 16
Rev.3.00
OUT2

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R2J25953-00 Summary of contents

Page 1

... R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. Features  For Automotive application  Built-in low on state resistance MOS FET. ...

Page 2

... R2J25953 Outline Pin Description Pin No. Pin name PGND1 Power GND1 connect 5 OUT1 Internally corrected to TAB1 6 PWM PWM input 7 INA A input 8 INB B input 9 GND Internally corrected to TAB3 10 LGND IC GND 11 GND Internally corrected to TAB3 12 DIAG Diagnostic output (open drain connect ...

Page 3

... R2J25953 Absolute Maximum Ratings Item Supply voltage Input voltage Diag voltage Output current Diag current Junction temperature Storage temperature Power temperature Notes 25C, 1 min 25C, 1 sec. 2. Applies to INA, INB, and PWM. Clamps it with 19 V typ. 3. Applies to DIAG 4. One element operation 25 ...

Page 4

... R2J25953 Electrical Characteristics Item Symbol Supply current VB Input current IinvbL MOS Static High-side RonH resistance Static Low-side RonL resistance Off state current IN Input current High threshold Vthin Low threshold Delay time tpLH tpHL Rise time Fall time DIAG Output voltage VDiag ...

Page 5

... R2J25953 Truth table The operation of OUT1, OUT2, and DIAG is shown in the following. Input PWM INA INB LVI TSD High High High Low Low High Low Low High High Low Low High Low Protection circuit doesn't operate Excluding All = Low on At least one of PWM, off INA, and INB is high ...

Page 6

... R2J25953 Equivalent Circuit Pin name Pin No. PGND1 PGND2 16, 17, 18 OUT1 5, 32, TAB1 OUT2 14, 23, TAB2 PWM 6 INA 7 INB 8 DIAG 12 VB1 34, 35, 36 VB2 19, 20, 21 R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Equivalent circuit V30 LGND Nch MOS Pch MOS Nch MOS VCC V30 PWM ...

Page 7

... R2J25953 Pin name Pin No. VCC 25 LGND 10 VBS1 30 VBS2 26 V30 28 R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Equivalent circuit VCC LGND VB1 VB2 VBS1 VBS2 VCC V30 LGND Preliminary VCC Page ...

Page 8

... R2J25953 Main Characteristics I vs. V CC0 (V) CC Ron Low Side vs. Iout Iout (A) Turn-on Delay Time (tpLH) vs. Iout PWM = 20 kHz, INA = High, INB = Low Iout (A) R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 ...

Page 9

... R2J25953 Rise Time vs. Iout PWM = 20 kHz, INA = High, INB = Low, 3 2.5 2 1 Iout (A) I vs. Ta CC0 Standby Mode -50 - 100 125 150 175 Ta (°C) Over-Voltage Detection vs -50 ...

Page 10

... R2J25953 Low-Voltage Inhibit Return vs 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 4 -50 - 100 125 150 175 Ta (°C) High Level Input Voltage vs. Ta (PWM/INA/INB) 4 3.5 3 2.5 2 1.5 1 -40 - 100 120140 160 Ta (°C) High Level Input Voltage vs. Ta (PWM/INA/INB) 4 3.5 3 2.5 2 1.5 1 -40 - 100 120140 160 Ta (° ...

Page 11

... R2J25953 Ron High side vs ILoad = -40 - 100 120140 160 Ta (°C) Overcurrent Detection vs. Ta (Short to GND) 100 -40 - 100 120140 160 Ta (°C) Turn-on Delay Time (tpLH) vs. Ta ...

Page 12

... R2J25953 Rise Time vs. Ta PWM = 20 kHz, INA = High, INB = Low, 3 2.5 2 1.5 1 0.5 0 -40 - 100 120140 160 Ta (°C) Recommended Wiring Pattern GND Notes 1. VB1 and VB2 will diverge soon because of the voltage sensing terminal and it wires for VBS1 and VBS2. ...

Page 13

... R2J25953 Operational Mode When PWM is controlled, recovery control can be selected because of the low loss. However, please note that reverse- brake hangs at acceleration of the motor. Operational mode Example 1. Forward mode (Recovery control) INA = PWM on/off INB = Low PWM = High Example 2. Reverse mode (Recovery control) ...

Page 14

... R2J25953 Timing Chart (Normal operation) Forward Standby (recovery) (INA,INB,PWM = Low) PWM INA INB PWM OUT1 High-side VGS OUT1 Low-side VGS OUT1 OUT2 High-side VGS OUT2 Low-side VGS OUT2 R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Reverce Forward (recovery) PWM PWM Preliminary Reverce Standby (INA, INB, PWM = Low) ...

Page 15

... R2J25953 Timing Chart (Protection operation) Overcurrent detection INA INB (Low) PWM VB IcL IOUT tcL Tj OUT1 OUT2 DIAG R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 OVD VtvH VtvL Hi-z Hi-z Hi-z Hi-z Latch cancel Preliminary TSD LVI VRLVI VHLVI TSD Thys Hi-z Hi-z Hi-z Hi-z Page ...

Page 16

... JEITA Package Code RENESAS Code P-HSOP36-11x14.1-0.65 PRSP0036JC-A 15.9 ± 0 × S Ordering Information Part No. R2J25953-00 700 pcs/ box R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Previous Code MASS[Typ.] — 1.96g Detail Terminal cross section Detail F Quantity Tray ...

Page 17

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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