BH616UV1610AI BSI [Brilliance Semiconductor], BH616UV1610AI Datasheet - Page 6

• Manufacturer Part Number: BH616UV1610AI
• Description: Ultra Low Power/High Speed CMOS SRAM
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BH616UV1610
READ CYCLE 2
READ CYCLE 3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
5. Transition is measured ± 500mV from steady state with C
The parameter is guaranteed but not 100% tested.
IL
BSI
.
ADDRESS
OE
CE1
D
CE2
LB, UB
CE1
CE2
D
OUT
OUT
(1,3,4)
(1, 4)
IL
and CE2= V
t
CLZ
(5,6)
t
t
t
L
CLZ1
CLZ2
ACS2
t
= 5pF.
ACS1
IH
.
(5)
(5)
(6)
t
t
ACS1
ACS2
t
6
t
AA
t
BE
OLZ
t
BA
t
t
OE
RC
t
t
t
CHZ2
t
CHZ
CHZ
BDO
t
OHZ
BH616UV1610
(5, 6)
(1,5)
(2,5)
t
OH
(5)
Revision 1.0
Jul.
2005