BH616UV1611_08 BSI [Brilliance Semiconductor], BH616UV1611_08 Datasheet - Page 10

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BH616UV1611_08

Manufacturer Part Number
BH616UV1611_08
Description
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
R0201-BH616UV1611
Revision History
Revision No.
1.0
1.1
History
Initial Production Version
Change -55 55ns(Max.) at V
55ns(Max.) at V
- E3 pin is NC pin
V
Typical value of standby current is replaced by
maximum value in Featues section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
CC
=1.8V
CC
=3.0V and 70ns(Max.) at
CC
=1.65~3.6V to
10
Draft Date
May 10,2006
Oct. 31, 2008
BH616UV1611
Revision
Oct.
Remark
Initial
2008
1.1

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