LM883AE NSC [National Semiconductor], LM883AE Datasheet - Page 4

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LM883AE

Manufacturer Part Number
LM883AE
Description
Low Power Quad Operational Amplifiers
Manufacturer
NSC [National Semiconductor]
Datasheet
www.national.com
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax -
TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than -0.3Vdc (at 25 C).
Note 5: Human body model, 1.5 kΩ in series with 100 pF.
Supply Voltage, V
Differential Input Voltage
Input Voltage
Input Current
Power Dissipation (Note 2)
Output Short-Circuit to GND
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
Thermal Resistance ThetaJA
ThetaJC
Package Weight (Typical)
ESD Tolerance (Note 5)
(V
CERDIP
CERPACK
LCC
CERAMIC SOIC
(One Amplifier) (Note 3)
V
CERDIP (Still Air)
(500LF/Min Air flow)
CERDIP
CERPACK
CERAMIC SOIC
CERDIP
CERPACK
LCC
CERAMIC SOIC
(500LF/Min Air flow)
CERPACK (Still Air)
LCC (Still Air)
(500LF/Min Air flow)
CERAMIC SOIC (Still Air)
(500LF/Min Air flow)
LCC
+
IN
≤ 15Vdc and T
<
−0.3Vdc) (Note 4)
+
A
= 25˚C
(Note 1)
4
−55˚C ≤ T
−65˚C ≤ T
−0.3Vdc to +32Vdc
32Vdc or +16Vdc
Continuous
A
A
≤ +125˚C
≤ +150˚C
1260mW
1350mW
103 C/W
176 C/W
176 C/W
116 C/W
116 C/W
700mW
700mW
51 C/W
91 C/W
66 C/W
19 C/W
18 C/W
24 C/W
18 C/W
410mg
50 mA
32Vdc
150˚C
260˚C
250V
TBD
TBD
TBD

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