IP2010PBF IRF [International Rectifier], IP2010PBF Datasheet
IP2010PBF
Manufacturer Part Number
IP2010PBF
Description
High Frequency GaN-Based Integrated Power Stage
Manufacturer
IRF [International Rectifier]
Datasheet
1.IP2010PBF.pdf
(1 pages)
GaNpowIR
Features
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Applications
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www.irf.com
Typical Application
Input voltage range of 7V to 13.2V
Output voltage range of 0.6V to 5.5V
Output current up to 30A
Benchmark peak and full load efficiency –
no heat sink required
Operation up to 3MHz
Ultrafast, PowIRtune
Wireless, low noise flip-chip design
Industry-standard TTL compatible Enable
and PWM inputs
Small footprint LGA package (7.7mm x
6.5mm x 1.7mm)
Pin compatible with iP2011
Server, Storage and Netcom POL
General DC/DC Converters
TM
TM
gate driver
High Frequency GaN-Based Integrated
Description
The iP2010 is a fully optimized, high frequency
power
applications utilizing IR’s Gallium Nitride (GaN)-
based power device technology platform.
The iP2010 integrates a highly sophisticated, ultra
fast PowIRtune driver IC matched to a multi-switch
monolithic GaN-based power device. These devices
are mounted in a completely wireless package
platform to deliver higher efficiency and more than
double the switching frequency of state-of-the-art
silicon-based integrated power stage devices.
With a switching capability up to 3MHz, the iP2010
enables designers to dramatically reduce the value
and size of output capacitors and inductors where
space is at premium.
configured to operate at a lower switching frequency
for applications that require the highest possible
efficiencies.
stage
solution
Power Stage
The device can also be
iP2010PbF
for
synchronous
PD-97461
buck