HCS515_11 MICROCHIP [Microchip Technology], HCS515_11 Datasheet - Page 23

• Manufacturer Part Number: HCS515_11
• Manufacturer: MICROCHIP [Microchip Technology]

9.0
Absolute Maximum Ratings
Ambient temperature under bias............................................................................................................ -40°C to +125°C
Storage temperature .............................................................................................................................. -65 °C to +150°C
Voltage on any pin with respect to V
Voltage on V
Total power dissipation (Note) .............................................................................................................................700 mW
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, IOK (V
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
© 2011 Microchip Technology Inc.
†
Note:
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
ELECTRICAL CHARACTERISTICS
Power dissipation is calculated as follows: P
device. This is a stress rating only and functional operation of the device at those or any other condi-
tions above those indicated in the operation listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
DD
with respect to Vss ..................................................................................................................0 to +7.0V
IK
(V
DD
SS
I
< 0 or V
pin ..............................................................................................................................150 mA
pin ...........................................................................................................................200 mA
O
†
< 0 or V
I
SS
> V
(except V
O
DD
>V
) .........................................................................................................± 20 mA
DD
) ..................................................................................................± 20 mA
DD
)......................................................................... -0.6V to V
DIS
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
DD
–V
OH
) x I
HCS515
OH
DS40183E-page 23
} + ∑ (V
OL
DD
x I
+0.6V
OL
)