STR91XFA STMICROELECTRONICS [STMicroelectronics], STR91XFA Datasheet - Page 56

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STR91XFA

Manufacturer Part Number
STR91XFA
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Electrical characteristics
6.11
Notes: 1 STR91xFAxx4 devices have 512 Kbytes primary Flash, STR91xFAxx2 devices have 256
56/78
2 V
3 Flash read access for synchronous addresses is 96 MHz maximum.
4 Flash read access for asynchronous accesses requires 2 wait states when FMI clock is above
Flash memory characteristics
V
Table 19.
Kbytes primary Flash
66 MHz. See STR91xF Flash Programming Manual for more information.
Table 20.
Bank erase
Sector erase
Bank program
Sector program
Word program
Program/erase cycles
Data retention
DDQ
DD
= 1.8V, V
= 2.7 - 3.6V, V
Parameter
Flash memory program/erase characteristics
Flash memory endurance
DDQ
Parameter
Primary Bank
(512 Kbytes)
Primary Bank
(256 Kbytes)
Secondary Bank
(32 Kbytes)
Of Primary Bank
(64 Kbytes)
Of Secondary Bank
(8 Kbytes)
Primary Bank
(512 Kbytes)
Primary Bank
(256 Kbytes)
Secondary Bank
(32 Kbytes)
Of Primary Bank
(64 Kbytes)
Of Secondary Bank
(8 Kbytes)
= 3.3V
DD
= 1.65 - 2V, T
,
T
A
Per word
= 25°C.
1)
1)
1)
1)
Test Conditions
A
= -40 / 85 °C unless otherwise specified.
Half word (16 bits)
Test Conditions
100K
Min
20
Typ
1300
3700
1900
700
300
250
500
60
8
4
8
Value
2)
Typ
100K W/E
Typ after
cycles
Value
1400
4700
2000
750
320
260
520
4.5
62
9
9
2)
Max
STR91xFA
1800
5100
2550
Max
11.5
950
450
320
640
80
11
6
cycles
years
Unit
Unit
ms
ms
ms
ms
ms
ms
ms
ms
µs
s
s

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