DMP2004TK_09 DIODES [Diodes Incorporated], DMP2004TK_09 Datasheet
DMP2004TK_09
Manufacturer Part Number
DMP2004TK_09
Description
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMP2004TK_09.pdf
(4 pages)
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
Notes:
DMP2004TK
Document number: DS30932 Rev. 4 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Device mounted on FR-4 PCB.
Characteristic
ESD PROTECTED
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
Steady
State
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
T
T
A
A
Symbol
R
= 25°C
= 85°C
BV
V
DS (ON)
C
I
I
|Y
V
C
C
GS(th)
GSS
DSS
TOP VIEW
SD
oss
DSS
iss
rss
fs
|
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
Min
-0.5
200
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SOT-523
1 of 4
Symbol
Symbol
T
J,
V
V
R
Mechanical Data
I
P
GSS
•
•
•
•
•
•
•
•
DSS
I
DM
T
θ JA
D
D
STG
Please click here to visit our online spice models database.
Typ
0.7
1.1
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Gate
Equivalent Circuit
Gate
Protection
Diode
Max
±1.0
-1.0
-1.0
-1.4
175
1.1
1.6
2.4
30
20
⎯
⎯
-55 to +150
Drain
Source
Value
Value
-430
-310
-750
150
833
-20
±8
Unit
ms
μA
μA
pF
pF
pF
V
Ω
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
G
TOP VIEW
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 0V, I
= -20V, V
=10V, I
= 0V, I
= V
= -4.5V, I
= -16V, V
= ±4.5V, V
= -2.5V, I
= -1.8V, I
D
GS
Test Condition
S
, I
DMP2004TK
S
D
D
D
= -115mA
= -250mA
= 0.2A
D
GS
= -250μA
D
D
GS
DS
= -430mA
= -300mA
= -150mA
© Diodes Incorporated
Units
Units
°C/W
= 0V
mW
= 0V
mA
mA
°C
V
V
= 0V
March 2009
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DMP2004TK_09 Summary of contents
Page 1
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Gate • "Green" Device (Note 4) • Qualified ...
Page 2
DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Typical Output Characteristics T , AMBIENT TEMPERATURE (°C) A Fig. 3 Gate Threshold Voltage vs. Ambient Temperature -I , DRAIN-SOURCE CURRENT (A) D Fig. 5 Static Drain-Source On-Resistance vs. Drain ...
Page 3
... Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature -I , DRAIN CURRENT (A) D Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMP2004TK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb ...
Page 4
Package Outline Dimensions Suggested Pad Layout Y Z Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated ...