TC54VC2101ECB TELCOM [TelCom Semiconductor, Inc], TC54VC2101ECB Datasheet - Page 2

• Manufacturer Part Number: TC54VC2101ECB
• Description: VOLTAGE DETECTOR
• Manufacturer: TELCOM [TelCom Semiconductor, Inc]

TC54
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (V
Output Voltage: CMOS ............ (V
Output Current .........................................................50mA
Power Dissipation: (T
Operating Temperature .......................... – 40 C to + 85 C
Storage Temperature ........................... – 65 C to + 150 C
Soldering Temperature ...................... 300 C, 10 seconds
ELECTRICAL CHARACTERISTICS:
Symbol
V
I
V
V
I
T
4-280
PIN DESCRIPTION
Pin No.
SS
OUT
IN
–
DET
HYST
C
(V
1
2
3
SOT-23A-3 .....................................................240mW
SOT-89-3 .......................................................400mW
TO-92
–
DET
)
.......................................................440mW
Open Drain ................. (V
Parameter
Operating Voltage
Quiescent Current
Threshold Voltage
Hysteresis Range
Output Current
Tempco of (V
IN) .....................................................................
Symbol
V
A
V
V
OUT
SS
IN
70 C)
–
DET
)
SS
– 0.3) to (V
Description
Analog input. This pin is both the power supply input and the voltage to be monitored.
Digital output. This output goes low when V
high when V
Ground terminal.
SS
Test Conditions
– 0.3) to 12V
V
V
Nch V
Pch V
– 40 C
T
–
DET
IN
A
= 2.1V
= 25 C, unless otherwise specified.
IN
IN
= 2.1 to 6.0V
DS
DS
+ 0.3)
3.0V
4.0V
5.0V
rises above V
= 2.1V
= 0.5
T
12V
A
85 C
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
–
DET
V
V
+ V
IN
IN
= 2.1V
= 8.0V
HYST
3.0V
4.0V
5.0V
. (See timing chart).
IN
drops below V
TELCOM SEMICONDUCTOR, INC.
x 0.98
(V
(V
x 0.02
Min
1.5
–
DET
–
DET
VOLTAGE DETECTOR
)
)
DET
–
and returns
x 0.05
(V
– 10.0
Typ
10.1
11.5
13.0
1.0
1.3
1.6
2.0
7.7
–
DET
100
)
x 1.02
(V
(V
x 0.08
Max
10.0
3.0
3.4
3.8
4.2
–
DET
–
DET
)
)
ppm/ C
V
V
Unit
V
mA
A