S-1000 SII [Seiko Instruments Inc], S-1000 Datasheet - Page 9
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S-1000
Manufacturer Part Number
S-1000
Description
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Manufacturer
SII [Seiko Instruments Inc]
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*1. − V
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Leakage current
Response time
Detection voltage
temperature coefficient
Rev.2.3
1. Nch open-drain output products
Electrical Characteristics
range in Table 1 .)
DET
: Actual detection voltage value, − V
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Item
∆
_00
−
∆
Ta
V
DET
*1
[
mV
*2
/
°
∆Ta•−V
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
C
∆−V
Symbol
]
− V
*1
V
I
V
I
t
LEAK
I
OUT
PLH
HYS
SS
DD
=
DET
DET
−
DET
V
DET(S)
V
V
Output transistor,
Nch, V
Output transistor,
Nch, V
Ta = − 40 to + 85 ° C
DD
DD
(
Typ.
DET(S)
= − V
= 5.5 V
DS
DS
) [ ]
DET(S)
: Specified detection voltage value (The center value of the detection voltage
= 0.5 V, V
= 5.5 V, V
Seiko Instruments Inc.
V
*2
+ 1.5 V S-1000N15 to 39
×
Condition
∆
Ta
Table 9
∆
−
−
−
−
DD
DD
−
•
= 1.2 V
= 5.5 V
S-1000N40 to 46
V
−
DET
V
DET
[
ppm
/
°
C
]
*3
− V
× 0.99
− V
× 0.03
÷
Min.
0.95
1.36
DET(S)
1000
−
−
−
−
−
(Ta = 25 ° C unless otherwise specified)
DET
− V
− V
× 0.05
± 100
Typ.
2.55
350
350
DET(S)
−
−
−
DET
− V
− V
× 1.01
× 0.07
Max.
± 350
900
900
100
5.5
60
DET(S)
−
DET
S-1000 Series
ppm /
Unit
mA
nA
nA
nA
µ s
° C
V
V
V
Measure-
circuit
ment
1
1
2
2
1
3
3
1
1
9