BD228 ISC [Inchange Semiconductor Company Limited], BD228 Datasheet
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BD228
Manufacturer Part Number
BD228
Description
isc Silicon NPN Power Transistor
Manufacturer
ISC [Inchange Semiconductor Company Limited]
Datasheet
1.BD228.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain-
·Complement to Type BD227/229/231
APPLICATIONS
·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website:www.iscsemi.cn
SYMBOL
SYMBOL
R
R
: h
V
V
V
V
T
I
P
th j-c
th j-a
T
CBO
CEO
CER
EBO
I
CM
stg
C
C
FE
J
Silicon NPN Power Transistor
= 40(Min)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter
Voltage(R
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
C
≤62℃
C
BE
PARAMETER
= 0.15A
= 1kΩ)
PARAMETER
BD226
BD228
BD230
BD226
BD228
BD230
BD226
BD228
BD230
a
=25
℃)
-65~150
VALUE
100
100
150
1.5
3.0
12.5
45
60
45
60
80
45
60
5
MAX
100
7
UNIT
UNIT
℃/W
℃/W
℃
℃
W
V
V
V
V
A
A
isc
Product Specification
BD226/228/230
Related parts for BD228
BD228 Summary of contents
Page 1
... Thermal Resistance,Junction to Ambient R th j-a isc Website:www.iscsemi.cn ℃) =25 a VALUE UNIT BD226 45 BD228 60 V BD230 100 BD226 45 BD228 60 V BD230 80 BD226 45 BD228 60 V BD230 100 5 V 1.5 A 3.0 A 12.5 W ℃ 150 ℃ -65~150 MAX UNIT ℃/W 7 ℃/W 100 isc Product Specification BD226/228/230 ...
Page 2
... BE Collector Cutoff Current CBO I Emitter Cutoff Current EBO h DC Current Gain FE Current Gain FE Current Gain FE-3 f Current-Gain—Bandwidth Product T isc Website:www.iscsemi.cn CONDITIONS BD226 BD228 I = 100mA ; BD230 30V 30V 0,T =125℃ ...