ZXTN26020DMFTA DIODES [Diodes Incorporated], ZXTN26020DMFTA Datasheet - Page 4

• Manufacturer Part Number: ZXTN26020DMFTA
• Description: HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
Fig. 10 Typical Gain-Bandwidth Product vs. Collector Current
0.001
500
400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
0.1
1
0
0.1
T = -55°C
T = 25°C
Fig. 8 Typical Base-Emitter Saturation Voltage
Fig. 6 Typical Collector-Emitter Saturation Voltage
A
A
V
5
CE
I
C B
I /I = 20
C B
/I
= 10V
I , COLLECTOR CURRENT (mA)
C
= 10
10 15
I , COLLECTOR CURRENT (mA)
1
C
T = 150°C
1
I , COLLECTOR CURRENT (mA)
A
C
T = 125°C
A
vs. Collector Current
vs. Collector Current
10
20 25
10
T = 150°C
T = 125°C
A
A
100
30
T = -55°C
100
A
T = 85°C
A
35 40 45 50
T = 25°C
A
1,000
1,000
T = 85°C
A
10,000
10,000
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1,000
100
1.0
0.8
0.6
0.4
0.2
Fig. 11 Collector Cutoff Current vs. Ambient Temperature
10
100
10
1
0
-50
0.1
1
0
Fig. 7 Typical Base-Emitter Turn-On Voltage
V
CE
-25
Fig. 9 Typical Capacitance Characteristics
T = -55°C
T = 25°C
V
= 5V
T = 150°C
C
C
A
A
A
5
CBE
ibo
T , AMBIENT TEMPERATURE (°C)
obo
I = 0
I , COLLECTOR CURRENT (mA)
C
A
C
1
Diodes Incorporated
= 20V
V , REVERSE VOLTAGE (V)
0
10
R
A Product Line of
vs. Collector Current
T = 125°C
A
25
15
10
50
20
T = 85°C
A
100
75
25
ZXTN26020DMF
100
1,000
30
f = 1MHz
© Diodes Incorporated
September 2009
125 150
35
10,000
40