2SC2308CTZ RENESAS [Renesas Technology Corp], 2SC2308CTZ Datasheet - Page 5

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2SC2308CTZ

Manufacturer Part Number
2SC2308CTZ
Description
Silicon NPN Epitaxial
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise figure
Small signal input
impedance
Small signal voltage
feedback ratio
Small signal current
transfer ratio
Small signal output
admittance
Note:
2SC458 (LG) 100 to 200
2SC2310
1. The 2SC458 (LG) and 2SC2310 are grouped by h
B
100 to 200
Symbol
V
V
V
I
I
V
Cob
NF
h
h
h
h
CBO
EBO
T
FE
ie
re
fe
oe
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
C
160 to 320
160 to 320
2SC458 (LG)
Min
30
30
5
100
Typ
0.67
230
1.8
3
16.5
70
130
11.0
D
250 to 500
Max
0.5
0.5
500
0.2
0.75
3.5
5
2SC2310
Min
55
50
5
100
FE
as follows.
Typ
0.67
230
1.8
3
16.5
70
130
11.0
Max
0.5
0.5
320
0.2
0.75
3.5
5
2SC458 (LG), 2SC2310
Unit
V
V
V
µA
µA
V
V
MHz
pF
dB
k
µS
10
–6
Test conditions
I
I
I
V
V
V
I
V
V
V
f = 1 MHz
V
f = 120 Hz, R
V
f = 270 Hz
C
C
E
C
CB
EB
CE
CE
CE
CB
CE
CE
= 10 µA, I
= 10 µA, I
= 1 mA, R
= 10 mA, I
=18 V, I
= 2 V, I
= 12 V, I
= 12 V, I
= 12 V, I
= 10 V, I
= 6 V, I
= 5V, I
C
C
C
E
C
E
= 0.1mA,
C
C
C
E
BE
= 0
= 0.1 mA,
B
= 0
g
= 0
= 0
= 0,
= 2 mA
= 2 mA
= 2 mA
= 1 mA
= 500
=

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