ZXMN10B08E6_05 ZETEX [Zetex Semiconductors], ZXMN10B08E6_05 Datasheet
ZXMN10B08E6_05
Related parts for ZXMN10B08E6_05
ZXMN10B08E6_05 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 100V 0.230 (BR)DSS DS(ON) DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes ...
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ZXMN10B08E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source ...
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ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMN10B08E6 ...
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ZXMN10B08E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...
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ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMN10B08E6 ...
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ZXMN10B08E6 TYPICAL CHARACTERISTICS 6 ISSUE 1 - OCTOBER 2005 ...
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PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres DIM Min Max A 0.90 1.45 A1 0.00 0.15 A2 0.90 1.30 b 0.35 0.50 C 0.09 0.20 D 2.80 ...