ZXMN2A04DN8_04 ZETEX [Zetex Semiconductors], ZXMN2A04DN8_04 Datasheet - Page 2

• Manufacturer Part Number: ZXMN2A04DN8_04
• Description: DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ZXMN2A04DN8
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
Thermal Impedance Graph.
S E M I C O N D U C T O R S
(c)
(b) (d)
(a) (d)
(b) (e)
A
A
A
=25°C
=25°C
=25°C
(V
(V
(V
GS
GS
GS
(a) (d)
(a) (e)
(b) (d)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C)
=70°C)
=25°C)
(b)
10 sec.
(b) (d)
(b) (d)
(a) (d)
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
SYMBOL
R
R
R
D
D
D
j
DSS
GS
:T
JA
JA
JA
stg
-55 to +150
LIMIT
VALUE
1.25
7.7
6.2
5.9
2.9
1.8
2.1
20
38
38
10
14
17
100
70
60
12
ISSUE 1 - JULY 2004
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C
W
W
W
V
V
A
A
A
A
A
A