IRF9540NSTRL IRF [International Rectifier], IRF9540NSTRL Datasheet

IRF9540NSTRL

Manufacturer Part Number

IRF9540NSTRL

Description

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Manufacturer

IRF [International Rectifier]

Datasheet

1.IRF9540NSTRL.pdf (10 pages)

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Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRF9540L) is available for low-

profile applications.

dv/dt

STG

@ T

Advanced Process Technology

Surface Mount (IRF9540S)

Low-profile through-hole (IRF9540L)

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

Pak is suitable

@ -10V

300 (1.6mm from case )

Typ.

–––

D P ak

IRF9540NS/L

HEXFET

-55 to + 175

Max.

0.91

-5.0

140

± 20

430

-23

-16

-76

-11

3.8

T O -26 2

Power MOSFET

DS(on)

Max.

1.1

DSS

= -23A

PD - 91483C

= -100V

= 0.117

Units

W/°C

V/ns

°C/W

°C

5/13/98

Related parts for IRF9540NSTRL

IRF9540NSTRL Summary of contents

Page 1

Advanced Process Technology Surface Mount (IRF9540S) Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...

Page 2

IRF9540NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF9540NSTRL IRF [International Rectifier], IRF9540NSTRL Datasheet

IRF9540NSTRL

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IRF9540NSTRL Summary of contents

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