ZXMN3A04DN8_02 ZETEX [Zetex Semiconductors], ZXMN3A04DN8_02 Datasheet
ZXMN3A04DN8_02
Related parts for ZXMN3A04DN8_02
ZXMN3A04DN8_02 Summary of contents
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DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 30V 0. (BR)DSS DS(ON) DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching ...
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ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) ...
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ISSUE 2 - OCTOBER 2002 ZXMN3A04DN8 CHARACTERISTICS 3 ...
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ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...
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ISSUE 2 - OCTOBER 2002 TYPICAL CHARACTERISTICS 5 ZXMN3A04DN8 ...
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ZXMN3A04DN8 TYPICAL CHARACTERISTICS 6 ISSUE 2 - OCTOBER 2002 ...
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PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex plc 2002 Europe Zetex plc Zetex GmbH Fields New Road Streitfeldstraße 19 Chadderton D-81673 München Oldham, OL9 8NP United Kingdom Germany Telephone (44) 161 622 4422 Telefon: (49) ...