SUP75N06 TEMIC [TEMIC Semiconductors], SUP75N06 Datasheet

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SUP75N06

Manufacturer Part Number
SUP75N06
Description
N-Channel Enhancement-Mode Transistors
Manufacturer
TEMIC [TEMIC Semiconductors]
Datasheet

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Product Summary
Absolute Maximum Ratings (
Thermal Resistance Ratings
Notes
a.
b.
c.
d.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283.
A SPICE Model data sheet is available for this product (FaxBack document #70527).
N-Channel Enhancement-Mode Transistors
Siliconix
S-47969—Rev. D, 08-Jul-96
Gate-Source Voltage
Continuous Drain Current
(T
(T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Junction to Ambient
Junction-to-Ambient
Junction-to-Case
J
V
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
= 175 C)
(BR)DSS
175 C)
60
SUP75N06-08
TO-220AB
Top View
G D S
(V)
1%.
DRAIN connected to TAB
b
r
DS(on)
Parameter
0.008
Parameter
( )
T
C
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
Free Air (TO-220AB)
T
A
= 25 C (TO-263)
T
L = 0.1 mH
T
C
C
I
SUB75N06-08
T
= 125 C
D
= 25 C
75
TO-263
Top View
G
(A)
C
a
D
= 25 C Unless Otherwise Noted
S
d
d
SUP/SUB75N06-08
Symbol
R
R
R
Symbol
thJA
thJA
thJC
T
V
E
J
I
I
P
P
, T
I
I
DM
AR
AR
GS
D
D
D
D
stg
N-Channel MOSFET
Limit
G
–55 to 175
62.5
0.8
40
Limit
187
240
280
75
3.7
55
60
20
a
c
D
S
)
Unit
Unit
C/W
mJ
W
W
V
A
A
C
1

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SUP75N06 Summary of contents

Page 1

... N-Channel Enhancement-Mode Transistors Product Summary V ( (BR)DSS DS(on) 60 0.008 TO-220AB DRAIN connected to TAB Top View SUP75N06-08 Absolute Maximum Ratings ( Parameter Gate-Source Voltage Continuous Drain Current ( 175 C) 175 C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy (TO-220AB and TO-263) ...

Page 2

SUP/SUB75N06-08 Specifications ( Unless Otherwise Noted) J Parameter Symbol Static V (BR)DSS Gate Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current I DSS b On-State Drain Current I D(on Drain-Source ...

Page 3

Typical Characteristics (25 C Unless Otherwise Noted) Output Characteristics 250 200 150 100 – Drain-to-Source Voltage (V) DS Transconductance 120 T = –55 C ...

Page 4

SUP/SUB75N06-08 Typical Characteristics (25 C Unless Otherwise Noted) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 125 150 175 T – ...

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