ZXMN3F318DN8TA ZETEX [Zetex Semiconductors], ZXMN3F318DN8TA Datasheet - Page 7

• Manufacturer Part Number: ZXMN3F318DN8TA
• Description: 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Q2 ELECTRICAL CHARACTERISTICS (at T
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
1 Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
2 Switching characteristics are independent of operating junction temperature.
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
3
For design aid only, not subject to production testing.
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
MIN.
30
1.0
7
amb
TYP.
11.8
11.5
0.82
430
101
2.5
3.3
6.3
1.7
4.9
= 25°C unless otherwise stated).
56
12
9
2
MAX.
0.5
100
3.0
0.035
0.055
1.2
ZXMN3F318DN8
UNIT
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
CONDITIONS
I D = 250μA, V GS =0V
V DS = 30V, V GS =0V
V GS =±20V, V DS =0V
I D = 250μA, V DS =V GS
V GS = 10V, I D = 5.0A
V GS = 4.5V, I D = 4A
V DS = 15V, I D = 5A
V DS = 15V, V GS =0V
f=1MHz
V DD = 15V, I D = 1A
R G ≅6.0Ω, V GS = 10V
V DS = 15V, V GS = 10V
I D = 5A
T j =25°C, I S = 1.7A,
V GS =0V
T j =25°C, I S = 2.1A,
di/dt=100A/µs
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