ZXM61N03F_04 ZETEX [Zetex Semiconductors], ZXM61N03F_04 Datasheet
ZXM61N03F_04
Related parts for ZXM61N03F_04
ZXM61N03F_04 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ...
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ZXM61N03F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T ...
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Refer Note ( 100m 1s 100ms 10ms 1ms 100us 10m 0 Drain-Source Voltage (V) DS Safe Operating Area 180 Refer Note (b) 160 140 120 100 D=0 D=0.2 20 D=0.1 Single ...
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ZXM61N03F ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...
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V - Drain-Source Voltage (V) DS Output Characteristics 10 VDS=10V 1 0.1 T=150°C T=25°C 0.01 1.5 2 Gate-Source Voltage (V) GS Typical Transfer Characteristics 10 1 VGS=4.5V VGS=10V 0.1 0.1 ...
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ZXM61N03F 250 200 150 100 50 0 0.1 1 VDS - Drain-Source Voltage (V) Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 10 Vgs=0V ID=0.91A f=1MHz Ciss 8 Coss Crss ...
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ZXM61N03F PACKAGE DIMENSIONS DIM Millimetres Min Max A 2.67 3.05 B 1.20 1.40 C – 1.10 D 0.37 0.53 F 0.085 0.15 G NOM 1.9 K 0.01 0.10 L 2.10 2.50 N NOM 0.95 Zetex plc. Fields New Road, Chadderton, ...