ZXM62N03E6_04 ZETEX [Zetex Semiconductors], ZXM62N03E6_04 Datasheet - Page 4

• Manufacturer Part Number: ZXM62N03E6_04
• Description: 30V N-CHANNEL ENHANCEMENTMODEMOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ZXM62N03E6
ELECTRICAL CHARACTERISTICS
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
(at T amb = 25°C unless otherwise stated)
4
30
1.0
1.1
TYP.
380
90
30
2.9
5.6
11.7
6.4
18.8
11.4
MAX.
1
100
0.11
0.15
9.6
1.7
2.8
0.95
UNIT CONDITIONS.
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
I
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/µs
D
V
D
D
j
j
DS
GS
GS
DS
DS
DD
G
DS
GS
=250µA, V
=250µA, V
=2.2A (refer to
=25°C, I
=25°C, I
GS
=6.0Ω, R
=30V, V
=10V, I
=4.5V, I
=10V,I
=25 V, V
=24V,V
=0V
=15V, I
=⎛ 20V, V
S
F
D
=2.2A,
D
GS
=2.2A,
=1.1A
D
D
D
GS
=2.2A
GS
GS
DS
=2.2A
=6.7Ω
=1.1A
=10V,
=0V
DS
= V
=0V,
=0V
=0V
GS