ZXMN6A11DN8_06 ZETEX [Zetex Semiconductors], ZXMN6A11DN8_06 Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A11DN8_06
• Description: 60V SO8 Dual N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
Min.
1.0
60
4
Typ. Max. Unit Conditions
35.2
17.1
1.95
1.25
0.86
0.85
21.5
20.5
330
4.9
3.5
8.2
4.6
3.0
5.7
2%.
0.120
0.180
0.95
100
1.0
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
ZXMN6A11DN8
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G ≅
DS
DS
GS
= 250 A, V
= 250 A, V
= 2.5A
= 2.5A
=25°C, I
=25°C, I
6.0 , V
= 60V, V
= 15V, I
= 40V, V
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
=0V
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S
S
= 2.8A,
= 2.5A,
GS
D
D
D
D
GS
GS
GS
GS
= 2.5A
= 2.5A
= 2.5A
DS
GS
DS
= 10V
= 2A
=0V
=0V
= 5V
= 10V
=0V
=V
=0V
GS