ZXM66P02N8_04 ZETEX [Zetex Semiconductors], ZXM66P02N8_04 Datasheet
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ZXM66P02N8_04
Related parts for ZXM66P02N8_04
ZXM66P02N8_04 Summary of contents
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P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY =-20V; R =0.025 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal ...
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ZXM66P02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V =-4.5V =-4.5V =-4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power ...
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ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...
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ZXM66P02N8 PACKAGE DIMENSIONS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Streitfeldstraß Mall Drive, Unit 4 D-81673 München ...