ZXMN6A11Z_06 ZETEX [Zetex Semiconductors], ZXMN6A11Z_06 Datasheet
ZXMN6A11Z_06
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ZXMN6A11Z_06 Summary of contents
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ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 0.120 @ V = 10V GS 60 0.180 @ V = 4.5V GS Description This new generation trench MOSFET from Zetex features a unique structure combining ...
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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...
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Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11Z 3 www.zetex.com ...
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Electrical characteristics (@ T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...
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Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11Z 5 www.zetex.com ...
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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ...
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Issue 2 - September 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN6A11Z www.zetex.com ...
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Package outline - SOT89 DIM Millimeters Min Max A 1.40 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.52 1.83 Note: Controlling dimensions are in millimeters. Approximate dimensions ...