ZXMN6A25 ZETEX [Zetex Semiconductors], ZXMN6A25 Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A25
• Description: 60V SO8 N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Electrical characteristics (at T
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
Parameter
Static
Drain-Source breakdown
voltage
Zero gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(†)
(‡) (†)
(
(
*
*
)
) (†)
(
*
(‡)
)
(‡)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
Min.
60
1
4
Typ.
1063
10.2
26.2
10.6
11.0
20.4
0.85
22.0
21.4
104
3.8
4.0
4.1
5.1
64
0.050
0.070
Max.
0.95
100
1.0
3
Unit
µA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
V
I
I
I
D
D
D
D
D
S
S
ZXMN6A25N8
DS
GS
GS
GS
DS
DS
DD
DS
DS
G
= 5.5A,V
= 2.2A,di/dt=100A/μs
=250μA, V
= 1A
= 4.5A
= 4.5A
=250μA, V
≅ 6.0Ω,
=60V, V
=±
= 10V, I
= 4.5V, I
= 15V, I
= 30V, V
= 30V, V
= 30V, V
= 30V, V
20V, V
www.zetex.com
GS
D
D
GS
D
DS
GS
GS
GS
GS
GS
= 4.5A
=0V
= 3.6A
DS
= 3.0A
=0V
=V
=0V
= 10V
= 5V
= 10V
=0V
=0V
GS