ZXMN6A25DN8TC ZETEX [Zetex Semiconductors], ZXMN6A25DN8TC Datasheet - Page 2
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ZXMN6A25DN8TC
Manufacturer Part Number
ZXMN6A25DN8TC
Description
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
1.ZXMN6A25DN8TC.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A25DN8TC
Manufacturer:
D1ODES
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
ZXMN6A25DN8
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a) (d)
(a) (e)
(b) (d)
A
A
A
=25°C
=25°C
=25°C
@V
@V
(a) (d)
(a) (e)
(b) (d)
GS
GS
GS
=10V; T
=10V; T
=10V; T
(c)
A
A
A
(b)
=25°C
=70°C
=25°C
10 sec.
(b) (d)
(b) (d)
(a) (d)
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
SYMBOL
R
R
R
D
D
D
j
DSS
GS
:T
JA
JA
JA
stg
PROVISIONAL ISSUE B - JUNE 2003
-55 to +150
LIMIT
VALUE
1.25
4.7
3.7
3.6
3.5
1.8
2.1
60
22
22
10
14
17
100
70
60
20
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C
W
W
W
V
V
A
A
A
A
A
A