ZXMHC10A07T8TC ZETEX [Zetex Semiconductors], ZXMHC10A07T8TC Datasheet

no-image

ZXMHC10A07T8TC

Manufacturer Part Number
ZXMHC10A07T8TC
Description
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
1.ZXMHC10A07T8TC.pdf (10 pages)
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
P-Channel = V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JUNE 2005
DEVICE
ZXMHC10A07T8TA
ZXMHC10A07T8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 Surface Mount Package
Single Phase DC Fan Motor Drive
ZXMH
C10A7
(BR)DSS
(BR)DSS
= -100V : R
= 100V : R
REEL
SIZE
13”
7”
WIDTH
12mm
12mm
TAPE
DS(on)
DS(on)
= 1.0 ; I
= 0.7 ; I
QUANTITY
1000 units
4000 units
PER REEL
D
D
= -1.3A
= 1.4A
1
G
G
D ,
2
1
1
D
2
ZXMHC10A07T8
S
S
2
1
S E M I C O N D U C T O R S
PINOUT
S
S
4
3
D ,
3
D
4
G
G
4
3

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ZXMHC10A07T8TC Summary of contents

Page 1

... Fast switching speed Low threshold Low gate drive Single SM-8 Surface Mount Package APPLICATIONS Single Phase DC Fan Motor Drive ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMHC10A07T8TA 7” 12mm ZXMHC10A07T8TC 13” 12mm DEVICE MARKING ZXMH C10A7 ISSUE 2 - JUNE 2005 = -1. ...

Page 2

ZXMHC10A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body ...

Page 3

ISSUE 2 - JUNE 2005 TYPICAL CHARACTERISTICS 3 ZXMHC10A07T8 ...

Page 4

ZXMHC10A07T8 N-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) ...

Page 5

P-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) ...

Page 6

ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 6 ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 ZXMHC10A07T8 ...

Page 8

ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 8 ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 ZXMHC10A07T8 ...

Page 10

ZXMHC10A07T8 PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany USA Telefon: (49) ...

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