ZXMHN6A07T8TC ZETEX [Zetex Semiconductors], ZXMHN6A07T8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMHN6A07T8TC
• Description: 60V N-CHANNEL MOSFET H-BRIDGE
• Manufacturer: ZETEX [Zetex Semiconductors]

ABSOLUTE MAXIMUM RATINGS
(a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the
(b) For a device surface mounted on a FR4 PCB at t
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300 S in still air conditions with the heat sink split into three
(d) For device with one active die.
(e) For any two die not sharing the same drain connection.
ZXMHN6A07T8
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Total power dissipation at T
Any Single transistor " on"
Single transistor ‘ on’
Two transistors ‘ on’ equally
Linear derating factor above 2 5 ° C
Single transistor " on"
Single transistor ‘ on’
Two transistors ‘ on’ equally
Thermal resistance - junction to ambient
Single transistor " on"
Single transistor " on"
Two transistors ‘ on’ equally
Operating and storage temperature range
heat sink split into three equal areas, one for each drain connection.
equal areas, one for each drain connection.
S E M I C O N D U C T O R S
(c)
(b) (d)
(b) (d)
(a) (d)
(a) (d)
(b) (d)
(V
(V
GS
(a) (d)
GS
GS
A
(a) (e)
(a) (e)
(a) (e)
= 1 0 V; T
= 1 0 V; T
= 1 0 V; T
= 2 5 ° C
(a)
(c)
A
= 10 sec.
A
A
= 2 5 ° C)
= 2 5 ° C)
(b) (d)
= 7 0 ° C)
(b) (d)
(a) (d)
(b) (d)
2
SYMBOL
V
V
I
I
I
I
P
R
T
D
DM
S
SM
TOT
th(j-amb)
j
DSS
GS
, T
stg
-55 to + 150
LIMIT
± 20
11.2
13.2
114
1.6
1.3
1.4
1.1
1.4
1.6
8.8
60
89
76
9
1
9
ISSUE 2 - MAY 2004
mW/° C
mW/° C
mW/° C
° C/W
° C/W
° C/W
UNIT
° C
W
W
W
V
V
A
A
A
A
A
A