DMN4030LK3_10 DIODES [Diodes Incorporated], DMN4030LK3_10 Datasheet
DMN4030LK3_10
Related parts for DMN4030LK3_10
DMN4030LK3_10 Summary of contents
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Product Summary V R (BR)DSS DS(on) 30mΩ 10V GS 40V 50mΩ 4.5V GS Description and Applications This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, ...
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Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current V = 10V GS Pulsed Drain current V = 10V GS Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics ...
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Thermal Characteristics R DS(on) Limited 100ms 10ms T =25°C amb 25mm x 25mm 100m 1oz FR4 100m 1 V Drain-Source Voltage (V) DS Safe Operating Area 60 T =25°C amb 50 25mm x 25mm 1oz FR4 ...
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Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time ...
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Typical Characteristics 10V 10 1 0.1 0.1 V Drain-Source Voltage (V) DS Output Characteristics V = 10V 150°C 0.1 0.01 1E Gate-Source Voltage (V) GS Typical Transfer Characteristics 25° ...
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Typical Characteristics - continued 800 600 C ISS C 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Charge Basic gate charge ...
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Package Outline Dimensions DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 - ...
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Suggested Pad Layout DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE ...