INA-01100 HP [Agilent(Hewlett-Packard)], INA-01100 Datasheet - Page 3

• Manufacturer Part Number: INA-01100
• Description: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
• Manufacturer: HP [Agilent(Hewlett-Packard)]

INA-01100 Typical Performance, T
(unless otherwise noted: The values are the achievable performance for the INA-01100 mounted in a 70 mil
stripline package.)
INA-01100 Chip Dimensions
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature. f = 0.1 GHz, I
Chip thickness is 140 m/5.5 mil. Bond Pads are
41 m/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
2.5
2.0
1.5
1.0
0.5
33
32
31
30
35
30
25
20
15
–55
.01
GND
2
Gain Flat to DC
.02
–25
(4)
TEMPERATURE ( C)
FREQUENCY (GHz)
NF
14.8
.05
375
G
+25
p
A
RF
(1)
IN
P
13 m
0.5 mil
= 25 C, I
1 dB
OUT
0.1
(3)
RF
0.2
+85
(2)
d
= 35 mA
0.5
GND
1
d
+125
= 35 mA.
1.0
13
11
9
7
3.0
2.5
2.0
1.5
1.0
19.7
500
13 m
0.5 mil
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 2. Device Current vs. Voltage.
50
40
30
20
10
15
12
0
9
6
3
0
.02
0
T
T
T
A
MS
MS
MS
= 25 C
= +125 C
= +25 C
= –55 C
.05
2
FREQUENCY (GHz)
I
I
I
d
d
d
6-86
= 40 mA
= 35 mA
= 30 mA
0.1
V
d
4
(V)
0.2
6
0.5
1.0
8
Figure 6. Noise Figure vs. Frequency.
Figure 3. Power Gain vs. Current.
3.0
2.5
2.0
1.5
1.0
35
30
25
20
15
.01
.02
.05
I
FREQUENCY (GHz)
d
.05
= 30 to 40 mA
0.1
I
d
(mA)
0.2
0.2
0.1 GHz
1.0 GHz
0.5 GHz
0.5
1.0
1.0