INA-12063-BLK HP [Agilent(Hewlett-Packard)], INA-12063-BLK Datasheet - Page 20

• Manufacturer Part Number: INA-12063-BLK
• Description: 1.5 GHz Low Noise Self-Biased Transistor Amplifier
• Manufacturer: HP [Agilent(Hewlett-Packard)]

To assist designers in optimizing
not only the immediate circuit
using the INA-12063, but to also
optimize and evaluate trade-offs
that affect a complete wireless
system, the standard deviation
( ) is provided for many of the
Electrical Specifications param-
eters (at 25 C) in addition to the
mean. The standard deviation is a
measure of the variability about
the mean. It will be recalled that a
normal distribution is completely
described by the mean and
standard deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling between
any two values, usually symmetri-
cally located about the mean.
Referring to Figure 30 for ex-
ample, the probability of a
parameter being between 1 is
68.3%; between 2 is 95.4%; and
between 3 is 99.7%.
Figure 30. Normal Distribution.
Phase Reference Planes
The positions of the reference
planes used to specify S-param-
eters and Noise Parameters for
the INA-12063 are shown in
Figure 31. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
-3
-2
-1
Parameter Value
68%
95%
99%
( ), typ
Mean
+1
+2
+3
Figure 31. Phase Reference Planes.
Test Circuits
The test circuit shown in Fig-
ure 32 is used for 100% testing of
the guaranteed RF and DC
parameters that are shown in the
Table of Electrical Specifications.
Figure 32. 900 MHz Test Circuit.
The test circuits in Figures 32 and
33 were used to generate the
characterization data and perfor-
mance curves for 900 MHz and
250 MHz.
Figure 33. 250 MHz Test Circuit.
Electrostatic Sensitivity
RFICs are electro-
static discharge
(ESD) sensitive
devices. Although the
INA-12063 is robust in design,
permanent damage may occur to
these devices if they are sub-
jected to high energy electrostatic
INPUT
INPUT
+3 V
+3 V
+3 V
+3 V
10 nF
10 nF
RF
RF
150
5.6 pF
180 nH
8.2 nH
100 pF
100 pF
5.6 k
16 k
TEST CIRCUIT
12
REFERENCE
12
6-135
PLANES
500
330
1 nF
1 nF
39 nH
8.2 nH
2.2 pF
5.6 pF
1 nF
1 nF
OUTPUT
OUTPUT
+3 V
+3 V
RF
RF
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equip-
ment) can discharge without
detection and may result in
degradation in performance,
reliability, or failure.
Electronic devices may be
subjected to ESD damage in any
of the following areas:
• Storage and handling
• Inspection and testing
• Assembly
• In-circuit use
The INA-12063 is a ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting,
testing, assembling, and using
these devices to avoid damage.
The in-use aspect of potential
ESD damage is sometimes over-
looked. One such example of
possible damage is in the use of
an ESD sensitive device as the
front-end LNA stage in personal
communication equipment, such
as cellular telephones, PCS, or RF
modems.
The input to receiver LNAs are
frequently connected to external
antennas that are subject to
human contact and exposure to
other potentially damaging levels
of ESD. If this type of condition
exists, some type of circuit
protection may be needed. One
simple method of preventing ESD
damage is to add a DC return
path (e.g., a shunt inductor) to
the input of the receiver. This
type of protection may be inte-
grated into other parts of the
receiver front end, such as in a
T/R switch, filter, or the input
matching network to the LNA.