2SD313L-X-TF3-T UTC [Unisonic Technologies], 2SD313L-X-TF3-T Datasheet - Page 2

• Manufacturer Part Number: 2SD313L-X-TF3-T
• Description: NPN EPITAXIAL PLANAR TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2SD313
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter On voltage
DC Current Gain
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION ON h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
PARAMETER
www.unisonic.com.tw
40-80
C
FE
SYMBOL
V
V
BV
BV
BV
CE(SAT)
I
I
BE(ON)
SYMBOL
h
CBO
EBO
FE
CBO
CEO
EBO
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
C
J
(T
I
I
I
V
V
I
V
I
I
A
C
C
E
C
C
C
=25°C)
60-120
CB
EB
CE
=1mA
=10mA
=100uA
=2A, I
=1A, V
=0.1A,V
=20V, I
=4V, I
=2V, I
TEST CONDITIONS
D
B
=0.2A
CE
C
C
CE
=0
=1A
=2V
E
=0
=2V
NPN SILICON TRANSISTOR
-55 ~ +150
100-200
RATINGS
+150
1.75
E
60
60
5
3
MIN
60
60
40
40
5
TYP
160-320
MAX
320
0.1
1.0
1.0
1.5
F
QW-R203-001,D
UNIT
UNIT
°C
°C
W
V
V
V
A
2 of 4
mA
mA
V
V
V
V
V