INA5001AP1 ISAHAYA [Isahaya Electronics Corporation], INA5001AP1 Datasheet - Page 2

• Manufacturer Part Number: INA5001AP1
• Description: FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

TYPICIAL CHARACTERISTICS
-100
-0.1
-10
1000
-1
800
600
400
200
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
-1
-0
0
-0
-0.1
0
COLLECTOR TO EMITTERSATURATION VOLTAGE
Collector dissipation-AMBIENT TEMPERATURE
BASE TO EMITTER VOLTAGE VBE (V)
-0.2
AMBIENT TEMPERATURE Ta (℃)
40
COMMON EMITTER TRANSFER
BASE CURRENT IB (mA)
-0.4
VS. BASE CURRENT
Ta=85℃
-1
80
-0.6
25℃
ISAHAYA ELECTRONICS CORPORATION
-40℃
120
-0.8
-10
160
Ta=25℃
-1
VCE=-4V
-100
200
-1.2
-0.6
-0.4
-0.2
1000
100
-1000
FOR LOW FREQUENCY AMPLIFY APPLICATION
-0
10
-100
-10
-0.1
-0
-0.1
COLLECTOR TO EMITTERSATURATION VOLTAGE
Ta=85℃
COLLECTOR TO EMITTER VOLTAGE VCE (V)
PcMAX=0.5W
25℃
-40℃
DC forward current gain VS. Collector current
-0.5
-40℃
Ta=85℃
-1
25℃
COLLECTOR CURRENT IC(mA)
COMMON EMITTER OUTPUT
VS. COLLECTOR CURRENT
Collector current IC(mA)
-1
〈SMALL-SIGNAL TRANSISTOR〉
-1
SILICON PNP EPITAXIAL TYPE
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-1.5
-2.5mA
-10
-10
-2.0mA
INA5001AP1
-2
-1.5mA
-100
-100
-2.5
IC/IB=10
VCE=-4V
IB=-0.5mA
Ta=25℃
-1mA
-1000
-3
-1000