HN58X2508TIE RENESAS [Renesas Technology Corp], HN58X2508TIE Datasheet - Page 25

• Manufacturer Part Number: HN58X2508TIE
• Description: Electrically Erasable and Programmable Read Only Memory
• Manufacturer: RENESAS [Renesas Technology Corp]

HN58X2508I/HN58X2516I
Notes
Data Protection at V
When V
and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this
EEPROM have a power on reset function. Be careful of the notices described below in order for the power
on reset function to operate correctly.
Rev.2.00, Aug.19.2004, page 25 of 27
• S should be fixed to V
• V
• V
• V
• When WRSR or WRITE instruction is executed before V
CC
may cause the trigger for the unintentional programming.
CC
CC
unintentional programming mode.
CC
waiting write cycle time (t
is turned on or off, noise on S inputs generated by external circuits (CPU, etc) may act as a trigger
should be turned on/off after the EEPROM is placed in a standby state.
should be turned on from the ground level (V
turn on speed should be slower than 10 µs/V.
CC
On/Off
CC
during V
W
).
CC
on/off. Low to high or high to low transition during V
SS
) in order for the EEPROM not to enter the
CC
turns off, V
CC
should be turned off after
CC
on/off