ADG658 Analog Devices, ADG658 Datasheet - Page 3
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ADG658
Manufacturer Part Number
ADG658
Description
+3 V/+5 V/5 V CMOS 4-/8-Channel Analog Multiplexers
Manufacturer
Analog Devices
Datasheet
1.ADG658.pdf
(12 pages)
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SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
REV. 0
Temperature range is as follows: B Version: –40°C to +85°C.Y Version: –40°C to +125°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
C
I
TRANS
ON
OFF
DD
IN
S
D
D
Channels (
Channels (
Channels ( R
ADG658
ADG659
ADG658
ADG659
I
(
ADG658
ADG659
ADG658
ADG659
ADG658
ADG659
, C
INL
INL
INL
ADG659)
(OFF)
(OFF)
, Digital Input Capacitance
(EN)
(EN)
S
or I
or I
(ON)
INH
ON
ON
)
)
INL
INL
INL
D
1
INH
S
D
(OFF)
(V
(OFF)
, I
DD
FLAT(ON)
S
= 5 V ±10%, V
(ON)
2
)
BBM
SS
+25C
85
150
4.5
8
13
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
0.005
2
120
200
120
190
35
50
100
0.5
1
–90
–90
180
330
5
29
15
30
16
0.01
= 0 V, GND = 0 V, unless otherwise noted.)
B Version
–40C
to +85C
160
9
14
270
245
60
–3–
0 to V
0 to V
0 to V
Y Version
–40C
to +125C
200
10
16
±5
±5
±2.5
±5
±2.5
2.4
0.8
±1
300
280
70
10
1
DD
DD
Unit
V
typ
max
typ
max
typ
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
MHz typ
MHz typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
R
V
R
V
R
V
R
V
V
Test Circuit 8
R
Test Circuit 9
R
Test Circuit 11
R
Test Circuit 10
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
S
S
S
S
S
S
S
S
S
S1
S
DD
DD
DD
IN
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
DD
= 0 V to 4.5 V, I
= 3.5 V, I
= 1.5 V to 4 V, I
= 1 V/4.5 V, V
= 1 V/4.5 V, V
= V
= 3 V; Test Circuit 5
= 3 V; Test Circuit 7
= 3 V; Test Circuit 7
= 2.5 V, R
= 300
= 300
= 300
= 300
= 300
= 300
= 300
= 300
= 50
= 50
= 50
= 50
= 50
= 50
= V
= 5 V, V
= V
= 5.5 V
= 4.5 V, V
= 5.5 V
D
S2
INL
INL
INL
, C
, C
, C
= 1 V or 4.5 V, Test Circuit 4
, C
, C
, C
, C
= 3 V; Test Circuit 6
or V
or V
ADG658/ADG659
S
SS
S
L
L
L
L
L
L
L
L
L
= 1 mA
L
L
L
L
L
L
L
L
L
L
L
L
SS
= 0 , C
= 0 V
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
= 5 pF; f = 1 MHz;
= 5 pF; f = 1 MHz;
= 5 pF;
= 5 pF;
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
INH
= 0 V
D
D
S
S
= 4.5 V/1 V;
= 4.5 V/1 V;
= 1 mA;
= 1 mA
L
L
L
= 1 nF;
= 1 nF;