ADG431 Analog Devices, ADG431 Datasheet - Page 3

• Manufacturer Part Number: ADG431
• Description: LC2MOS Precision Quad SPST Switches
• Manufacturer: Analog Devices

REV. B
Single Supply
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Versions: –40 C to +85 C; T Versions: –55 C to +125 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
R
R
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
Break-Before-Make Time Delay, t
(ADG433 Only)
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
C
I
I
Power Dissipation
ON
OFF
DD
L
ON
ON
ON
ON
IN
S
D
D
I
, C
INL
ADG431 In
0
1
(OFF)
(OFF)
Digital Input Capacitance
vs. V
Drift
Match
S
or I
(ON)
D
INH
(V
Truth Table (ADG431/ADG432)
S
)
(V
ADG432 In
1
0
DD
D
INL
INH
S
D
= +12 V
(OFF)
(OFF)
, Is (ON)
2
D
10%, V
Switch Condition
ON
OFF
+25 C
28
42
20
0.5
5
0.005
9
165
60
25
25
68
85
9
9
35
0.0001
0.03
0.0001
0.03
0.04
0.25
0.04
0.25
0.01
0.3
SS
B Versions
= O V, V
–40 C to
+85 C
0 V to V
45
2.4
0.8
240
115
0.1
0.1
1.9
2
2
3
0.01
L
= +5 V
DD
+25 C
28
42
20
0.5
5
0.005
9
165
60
25
25
68
85
9
9
35
0.0001
0.03
0.0001
0.03
10%, GND = O V, unless otherwise noted)
–3–
0.04
0.25
0.04
0.25
0.01
0.3
T Versions
–55 C to
+125 C
0 V to V
45
2.4
0.8
240
115
0.1
0.1
1.9
15
15
17
0.01
Logic
0
1
DD
Units
V
% typ
%/ C typ
% typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
A typ
A max
W max
typ
max
Truth Table (ADG433)
Switch 1, 4
OFF
ON
ADG431/ADG432/ADG433
Test Conditions/Comments
0 < V
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
V
R
V
R
V
R
V
Test Circuit 5
V
Test Circuit 6
R
Test Circuit 7
R
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5 V
V
DD
D
DD
D
D
D
IN
DD
L
S
L
S
L
S1
S
L
L
DD
L
= +8 V; Test Circuit 4
= +8 V; Test Circuit 4
= 0 V, R
= 300 , C
= 300 , C
= 300 , C
= 50 , C
= 50 , C
= +5.25 V
= 0 V, I
= V
= 12.2/1 V, V
= 12.2/1 V, V
= V
= V
= +10.8 V
= +13.2 V
= +12 V, V
= +13.2 V
D
S
< 8.5 V, I
S2
INL
= +12.2 V/+1 V;
= +10 V;
S
or V
S
= –10 mA
= 0 , C
L
L
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
INH
Switch 2, 3
ON
OFF
SS
= 35 pF;
= 35 pF;
= 35 pF;
S
S
S
= 0 V
= –10 mA;
= 1/12.2 V;
= 1/12.2 V;
L
= 10 nF;