ADG821 Analog Devices, ADG821 Datasheet - Page 2

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ADG821

Manufacturer Part Number
ADG821
Description
Manufacturer
Analog Devices
Datasheet

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ADG821/ADG822/ADG823–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
3
Specifications subject to change without notice.
Temperature range: Automotive range: –40°C to +125°C.
On resistance parameters tested with I
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
ON
OFF
DD
IN
S
D
D
Channels (∆R
I
(ADG823 Only)
INL
(OFF)
, C
, Digital Input Capacitance
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
FLAT(ON)
S
(ON)
S
= 10 mA.
3
BBM
)
25 C
0.5
0.6
0.16
0.2
0.15
0.23
± 0.01
± 0.25
± 0.01
± 0.25
± 0.01
± 0.25
0.005
4
33
45
11
16
32
15
–52
–82
24
85
98
230
0.001
–40 C to
+85 C
0.7
0.25
0.26
± 3
± 3
± 3
48
19
1.0
–2–
–40 C to
+125 C
0 V to V
0.8
0.28
0.3
± 25
± 25
± 25
2.0
0.8
± 0.1
52
21
1
2.0
2
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ R
pF typ
pF typ
pF typ
µA typ
µA max
1
(V
–40 C to +125 C, unless otherwise noted.)
DD
= 5 V
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
f =1 MHz; Test Circuit 7
R
f = 1 MHz; Test Circuit 9
Test Circuit 8
f =1 MHz
f =1 MHz
f =1 MHz
V
Digital Inputs = 0 V or 5.5 V
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
DD
±
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V; Test Circuit 4
= 3 V; Test Circuit 4
= 2.5 V; R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 5.5 V
= 5.5 V
10%, GND = 0 V. All specifications
D
INL
S2
= 1 V, or V
= 3 V; Test Circuit 5
or V
L
L
L
L
L
L
DD
DD
DD
S
= 35 pF,
= 35 pF,
= 35 pF,
= 0 Ω, C
= 5 pF,
= 5 pF
= 5 pF;
INH
, I
, I
, I
D
D
S
S
S
= 1 V/4.5 V;
= 1 V/4.5 V;
= 100 mA;
= 100 mA
= 100 mA
S
= V
L
D
= 1 nF;
= 4.5 V;
REV. 0

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