NE57811S Philipss, NE57811S Datasheet - Page 9

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NE57811S

Manufacturer Part Number
NE57811S
Description
Advanced DDR memory termination power with shutdown
Manufacturer
Philipss
Datasheet

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Philips Semiconductors
TEST CIRCUITS
2003 Apr 02
Advanced DDR memory termination power
with shutdown
V
IN
V
V
IN
IN
C
820 F
OSCON
IN
0.4 V
2.5 V
Figure 11. Load transient test (+3 A – –3 A).
Figure 12. V
NE57811
V
V
4
DD
SS
2
3
SHTDWN
DD
NE57811
V
TT
to V
V
V
9
DD
SS
1
2
3
TT
LIGHT LOAD
CERAMIC
transient test.
V
(5 ea)
10 F
TT
HEAVY LOAD
1
820 F
OSCON
R
(LOAD)
SL01696
GND
SL01695
NE57811
Product data

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