CBTD3306 Philips Semiconductors, CBTD3306 Datasheet - Page 3

• Manufacturer Part Number: CBTD3306
• Description: Dual bus switch with level shifting
• Manufacturer: Philips Semiconductors

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
3. The package thermal impedance is calculated in accordance with JESD 51.
1. All unused control inputs of the device must be held at V
1. All typical values are at V
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
Philips Semiconductors
ABSOLUTE MAXIMUM RATINGS
T
NOTES:
RECOMMENDED OPERATING CONDITIONS
NOTE:
DC ELECTRICAL CHARACTERISTICS
T
NOTES:
2001 Nov 08
amb
amb
SYMBOL
SYMBOL
SYMBOL
SYMBOL
C
Dual bus switch with level shifting
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
IO(OFF)
T
I
r
V
V
T
OUT
V
V
I
V
= –40 to +85 C, unless otherwise specified.
= –40 to +85 C, unless otherwise specified.
V
on
I
amb
C
V
CC
I
CC
IK
stg
CC
I
IH
CC
IL
IK
I
P
I
I
3
3
DC supply voltage
DC input voltage
DC output current
Input diode current
Storage temperature range
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
Input clamp voltage
Input leakage current
Quiescent supply current
Output high pass voltage
Additional supply current per input pin
Control pins capacitance
Port off capacitance
On-resistance
PARAMETER
CC
PARAMETER
2
= 5 V, T
amb
1
= 25 C.
PARAMETER
PARAMETER
2
V
V
V
See Figure 1
V
other inputs at V
V
V
V
V
V
1
CC
CC
CC
CC
CC
I
O
CC
CC
CC
= 3 V or 0
= 3 V or 0; OE = V
or GND to ensure proper device operation.
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
= 5.5 V, one input at 3.4 V,
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
TEST CONDITIONS
3
I
O
I
I
I
I
= –18 mA
= GND or 5.5 V
= 0V; I
= 0 V; I
= 2.4 V; I
= 0, V
CONDITIONS
CC
V
or GND
I/O
I
CC
I
= V
I
= 64 mA
< 0
= 30 mA
I
= 15 mA
CC
or GND
MIN
—
—
—
—
—
—
—
—
—
—
MIN
T
–40
4.5
2.0
—
amb
CC
–0.5 to +7.0
–0.5 to +7.0
–65 to +150
= –40 to +85 C
RATING
LIMITS
LIMITS
or GND
TYP
128
–50
3.20
6.50
3.6
3.6
—
—
—
—
—
17
1
CBTD3306
MAX
+85
5.5
0.8
—
MAX
–1.2
1.5
2.5
—
—
—
35
5
5
1
Product data
UNIT
mA
mA
V
V
C
UNIT
UNIT
UNIT
mA
mA
pF
pF
V
V
V
V
V
C
A