93LC56A Microchip Technology, 93LC56A Datasheet - Page 5

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93LC56A

Manufacturer Part Number
93LC56A
Description
2K 2.5V Microwave Serial EEPROM
Manufacturer
Microchip Technology
Datasheet

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3.4
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
FIGURE 3-2:
FIGURE 3-3:
CLK
1997 Microchip Technology Inc.
DO
CLK
DO
CS
DI
CS
DI
Guaranteed at Vcc = 4.5V to +6.0V.
CSL
ERASE
). DO at logical “0” indicates that program-
HIGH-Z
HIGH-Z
ERASE TIMING
ERAL TIMING
1
1
0
1
0
1
A
1
N
A
0
N
-1
A
Preliminary
X
N
-2
•••
•••
3.5
The ERAL instruction will erase the entire memory
array to the logical “1” state. The ERAL cycle is identical
to the ERASE cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences at
the falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
plete.
A0
X
T
T
CSL
CSL
CSL
Erase All (ERAL)
) and before the entire ERAL cycle is com-
T
T
T
T
SV
EC
CHECK STATUS
WC
SV
CHECK STATUS
BUSY
BUSY
93LC56A/B
READY
READY
DS21208A-page 5
HIGH-Z
HIGH-Z
T
T
CZ
CZ

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