LH5164AH Sharp Electrionic Components, LH5164AH Datasheet - Page 7
LH5164AH
Manufacturer Part Number
LH5164AH
Description
CMOS 64K (8K x 8) Static RAM
Manufacturer
Sharp Electrionic Components
Datasheet
1.LH5164AH.pdf
(11 pages)
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CMOS 64K (8K
NOTES:
1. The writing occurs during an overlapping period of CE
2. t
3. t
4. t
5. If CE
6. While I/O pins are in the output state, input signals with the opposite logic level must not be applied.
to the time when the writing is finished.
outputs will remain high-impedance.
CW
AS
WR
is defined as the time from address change to writing start.
is defined as the time from the last occuring transition, either CE
is defined as the time from writing finish to address change.
1
LOW transition or CE
A
0
8) Static RAM
D
- A
CE
CE
WE
OUT
D
OE
12
IN
1
2
2
HIGH transition occurs at the same time or after WE LOW transition, the
(NOTE 5)
(NOTE 6)
(NOTE 3)
Figure 6. Write Cycle 1
t
AS
1
= 'LOW,' CE
t
OHZ
t
AW
t
WC
2
1
= 'HIGH,' and WE = 'LOW' (t
LOW transition or CE
(NOTE 2)
t
CW
t
CW
(NOTE 1)
HIGH-Z
t
WP
t
DW
(NOTE 4)
DATA VALID
2
t
t
WR
WR
t
WR
HIGH transition,
t
DH
WP
).
LH5164A/AH
5164A-4
7