TZA3019AHT Philips Semiconductors, TZA3019AHT Datasheet - Page 15

• Manufacturer Part Number: TZA3019AHT
• Description: 2.5 Gbits/s dual postamplifier with level detectors and 2 x 2 switch
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. JEDEC standard.
2000 Apr 10
V
V
I
P
T
T
T
R
R
R
R
n
SYMBOL
SYMBOL
stg
j
amb
EE
n
tot
th(j-s)
th(j-a)
th(s-a)
th(s-a)(req)
2.5 Gbits/s dual postamplifier with level
detectors and 2
negative supply voltage
DC voltage
DC current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to
solder point (exposed die pad); note 1
thermal resistance from junction to
ambient; note 1
thermal resistance from solder point to
ambient (exposed die pad); note 1
required thermal resistance from
solder point to ambient
pins IN1, IN1Q, IN2, IN2Q, LOSTH1, LOSTH2, LEVEL1, LEVEL2,
V
GND2A, GND1B and GND2B
pins LOS1, LOS2, INV1, INV2, S1 and S2
pins IN1, IN1Q, IN2 and IN2Q
pins LOSTH1, LOSTH2, LEVEL1 and LEVEL2
pins V
pins OUT1, OUT1Q, OUT2 and OUT2Q
pins INV1, INV2, S1 and S2
ref
, TEST, OUT2Q, OUT2, OUT1Q, OUT1, V
ref,
TEST, LOS1 and LOS2
PARAMETER
2 switch
PARAMETER
1s2p multi-layer test board
1s2p multi-layer test board
LOS circuits switched on
V
both output circuits
V
both output circuits
15
o
o
= 200 mV (p-p) single-ended;
= 800 mV (p-p) single-ended;
EEP
, GND1A,
CONDITIONS
V
V
0
0
5.5
20
1
30
65
40
EE
EE
MIN.
0.5
0.5
Preliminary specification
+0.5
0.5
V
+20
14
+1
+30
20
1.2
+150
150
+85
VALUE
EE
MAX.
15
33
18
60
30
+ 7
TZA3019
V
V
V
mA
mA
mA
W
C
C
C
A
A
UNIT
UNIT
K/W
K/W
K/W
K/W
K/W