AT738S22 Power Semiconductors, AT738S22 Datasheet
AT738S22
Manufacturer Part Number
AT738S22
Description
PHASE CONTROL THYRISTOR
Manufacturer
Power Semiconductors
Datasheet
1.AT738S22.pdf
(4 pages)
R
R
V
V
V
I² t
V
V
di/dt
dv/dt
td
tq
Q rr
V
V
V
I
V
P
P
T
F
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Symbol
r
I
I
I
I
I
I rr
I
I
I
feb 97 - ISSUE : 02
RRM
RSM
DRM
RRM
DRM
T (AV)
T (AV)
TSM
T
T(TO)
T
H
L
GT
GT
GD
FGM
FGM
RGM
GM
G
th(j-h)
th(c-h)
j
BLOCKING
CONDUCTING
SWITCHING
GATE
MOUNTING
ANSALDO
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Mean on-state current
Mean on-state current
Surge on-state current
I² t
On-state voltage
Threshold voltage
On-state slope resistance
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
Latching current, typical
Gate trigger voltage
Gate trigger current
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Mass
Characteristic
ORDERING INFORMATION : AT738 S 22
standard specification
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
V=VRRM
V=VDRM
180° sin, 50 Hz, Th=55°C, double side cooled
180° sin, 50 Hz, Tc=85°C, double side cooled
sine wave, 10 ms
without reverse voltage
On-state current =
From 75% VDRM up to 3000 A, gate 10V 5ohm 125
Linear ramp up to 75% of VDRM
VD=100V, gate source 25V, 10 ohm , tr=.5 µs
dV/dt = 20 V/µs linear up to 80% VDRM
di/dt=-20 A/µs, I= 2000 A
VR= 50 V
VD=5V, gate open circuit
VD=5V, tp=30µs
VD=5V
VD=5V
VD=VDRM
Pulse width 100 µs
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
Conditions
Repetitive voltage up to
Mean on-state current
Surge current
AT738
VDRM&VRRM/100
2000 A
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Tx 270318 ANSUSE I -
Fax Int. +39/(0)10 6442510
[°C]
125
125
125
125
125
125
125
125
125
125
125
25
25
25
25
25
25
Tj
2200
3670
0.090
18000
40.0 / 50.0
2200
2300
2200
3670
2860
1700
60
0.92
0.25
-30 / 125
200
200
200
500
320
300
700
350
150
1.1
3.5
Value
60
30
10
11
3
5
2
2
x1E3
V
A
kA
°C/kW
°C/kW
mohm
Unit
A/µs
V/µs
mA
mA
A²s
mA
mA
mA
µC
kA
kN
µs
µs
W
W
°C
V
V
V
A
A
V
V
A
V
V
V
A
V
g
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AT738S22 Summary of contents
Page 1
ANSALDO PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic BLOCKING V Repetitive peak reverse voltage RRM V Non-repetitive peak reverse voltage RSM V Repetitive peak off-state voltage DRM I Repetitive peak reverse current RRM I ...
Page 2
AT738 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Th [°C] 130 120 110 100 1000 P [W] F(AV) 7000 6000 5000 4000 3000 2000 1000 0 0 1000 DISSIPATION CHARACTERISTICS ...
Page 3
AT738 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Th [°C] 130 120 110 100 1000 P [W] F(AV) 7000 6000 5000 4000 3000 2000 1000 0 0 1000 DISSIPATION CHARACTERISTICS ...
Page 4
AT738 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ON-STATE CHARACTERISTIC Tj = 125 °C 12000 10000 8000 6000 4000 2000 0 0.6 1.1 On-state Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 12.0 10.0 8.0 6.0 ...