PA2423L-EV SiGe Semiconductor Inc., PA2423L-EV Datasheet - Page 4

• Manufacturer Part Number: PA2423L-EV
• Description: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
• Manufacturer: SiGe Semiconductor Inc.

AC Electrical Characteristics
Conditions: V
Notes: (1) Guaranteed by production test at T
Typical Performance Characteristics
Test Conditions: SiGe PA2423L-EV: V
= 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted.
DOC# 05PDS002 Rev 4
dP
f
P
∆P
PAE
G
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
STAB
L-U
out
VAR
OUT
temp
Symbol
/dVCTL
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
24
23
22
21
20
19
18
17
16
15
14
2.4
Input and Output externally matched to 50Ω, unless otherwise noted.
Pout, Icc vs Supply Voltage
CC0
2.6
= V
Pout
CC1
3
1
1
3
3
3
3.4
2
2
2
2.8
Note
Vcc(V)
= V
3
CC2
Frequency Range
Output Power @ P
Output Power @ P
Output Power variation over temperature (-40°C <T
<+85°C)
Control Voltage Sensitivity
Power Added Efficiency at +22.5 dBm Output Power
Gain Variation over band (2400-2500 MHz)
Harmonics
Isolation in “OFF” State, P
Reverse Isolation
Stability (P
= V
3.2
RAMP
3.4
Icc
=3.3V, V
IN
3.6
CC0
= +2dBm, Load VSWR = 6:1)
150
142
134
126
118
110
102
94
86
78
70
=V
CTL
IN
IN
CC1
=+2 dBm, V
=+2 dBm, V
A
07/26/2001
Parameter
=V
= 3.3V, PIN =+2 dBm, T
=25°C.
2.4 GHz Bluetooth Class 1 Power Amplifier IC
CC2
IN
= +2dBm, V
=V
RAMP
CTL
CTL
= 3.3V
=0.4V
=3.3V, V
RAMP
Output Power, Gain vs Input Power
Pout
Gain
25
20
15
10
5
0
= 0V
-28
A
CTL
=25°C, f =2.45 GHz,
-24
Input Power (dBm)
A
= 3.3V, P
-20
Preliminary Information
-16
-12
Min.
2400
All non-harmonically related
outputs less than -50 dBc
20
15
32
IN
-8
= +2 dBm, T
-4
Typ.
22.5
-20
-40
0.7
45
20
42
0
1
4
PA2423L
Page 4 of 11
2500
8
23.5
120
1.0
-35
Max. Unit
30.00
25.00
20.00
15.00
10.00
5.00
0
2
A
= 25°C, f
dBm/V
MHz
dBm
dBm
dBc
dB
dB
dB
dB
%