ZSH330G Zetex Semiconductors, ZSH330G Datasheet - Page 2

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ZSH330G

Manufacturer Part Number
ZSH330G
Description
SUPPLY VOLTAGE MONITOR
Manufacturer
Zetex Semiconductors
Datasheet
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
Offstate Output Voltage
Onstate Output
Source Current(
Clamp Diode
Forward Current(
Operating Junction
Temperature
Operating Temperature
Storage Temperature
TEST CONDITIONS
(T
COMPARATOR
OUPUT
TOTAL DEVICE
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming
that the device is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible.
PARAMETER
Threshold Voltage
Low state output (V
Threshold Voltage
High state output (V
Hysteresis
PARAMETER
Output source saturation:
Onstate output source current
(V
Offstate output leakage current
(V
Clamp diode forward voltage (I
Propagation delay
(V
PARAMETER
Operating input voltage range
Quiescent input current (V
amb
(V
(V
(V
cc
cc
in
=2.7V, Output=0V)
=3.3V, Output=0V)
cc
cc
cc
3.3V to 2.7V, R
ZSH330
=2.7V, I
=2.7V, I
=1.0V, I
=25°C for typical values, T
source
source
source
Note 1
Note 1
=8.0mA)
=2.0mA)
=2 A)
l
=10k, T
cc
)
cc
)
increasing)
decreasing)
amb
cc
-1 to 10V
10V
Internally limited
100mA
150°C
-40 to 85°C
-55 to 150°C
=3.3V)
=25°C)
f
=10mA) V
amb
SYMBOL
V
V
V
SYMBOL
V
I
I
T
SYMBOL
V
I
source
oh
q
=-40 to 85°C for min/max values (Note3))
d
IL
IH
H
OH
f
cc
4-330
Power Dissipation
TO92
SOT223
SO8
3.01
3.01
0.01
10
0.6
1.0 to 6.5
MIN
MIN
MIN
3.09
3.07
0.02
21
0.02
1.2
1.4
130
TYP.
TYP.
TYP.
3.15
3.15
0.05
V
V
V
50
0.5
1.5
180
CC
CC
CC
MAX.
MAX.
MAX.
-1.3
-1.2
-0.4
780mW
2W(
780mW(
Note 2
UNITS
V
V
V
UNITS
V
V
V
mA
V
UNITS
V
A
s
A
Note 2
)
)

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